Summary:
Radiation defect generation by high-energy MeV electron irradiation of n- and p- type Si-SiO2 structure with different kind of oxides has been studied. The morphology changes of SiO2 oxide during MeV electrons irradiation was observed by AFM. Si+ ion implanted Si-SiO2 structures before and after MeV electron irradiation are presented. The redistribution of oxygen and silicon atoms and Si nanocrystal generation during MeV electron irradiation was observed by RBS/C and AFM techniques respectively. Optical properties, photoluminescence and spectroscopic studies of SiOx films irradiated with MeV electrons are carried out also.
Author:
Sonia Kaschieva
Biographie:
Prof. Sonia Kaschieva PhD, DSc, ISSP, BAS. Sofia, Bulgaria. Born 1943, Bulgaria. 1999 - Doctor of Sciences in JINR, Dubna, Russia. 2004 –Professor, associated. member of ISSP - BAS Prof. Sergey N. Dmitriev PhD, DSc, JINR, Dubna - RussiaBorn 1954, Russia1996 Doctor of Sciences in JINR, Dubna, Russia2000 Professor, Director of the FLNR JINR
Author:
Sergey N. Dmitriev
Biographie:
Number of Pages:
148
Book language:
English
Published On:
2019-01-24
ISBN:
978-613-8-50284-5
Publishing House:
Scholars' Press
Keywords:
Si heterostructures, MOS strucrures, interfaces, MeV electron irradiation, Radiation defects - generation and annealing
Product category:
SCIENCE / Physics